TS5A3159ADCKR NOUVEAU ET ORIGINAL, COURANT, D/C : 12+
Nous avons également d'autres composants d'IC en stock en tant que ci-dessous :
| DDR3 |
| DDR3 512Mx8 PC1333 | H5TQ4G83BMR-H9 | Hynix | 6400 | Actions HK |
| DDR3 512Mx4 PC1333 | MT41J512M4HX-15E : D | Micron | 10000 | 3 jours |
| DDR3 256Mx8 PC1333 | K4B2G0846C-HCK0 | Samsung | 10240 | 3 jours |
| DDR3 256Mx8 PC1333 | K4B2G0846C-HCH9 | Samsung | 10000 | 3 jours |
| DDR3 256Mx8 PC1333 | H5TQ2G83AFR-H9C | Hynix | 20000 | Actions HK |
| DDR3 256Mx8 PC1333 | H5TQ2G83BFR-H9C | Hynix | 48000 | Actions HK |
| DDR3 256Mx8 PC1333 | MT41J256M8HX-15E : D | Micron | 30000 | 1 jour |
| DDR3 256Mx8 PC1333 | PRN256M8V69AG8GKF-15E | Spectek | 50000 | 1 jour |
| Basse tension de DDR3 256Mx8 PC1600 | MT41K256M8DA-125 : M | Micron | 5000 | 1 jour |
| DDR3 128Mx16 PC1333 | K4B2G1646C-HCH9 | Samsung | 12000 | 1 jour |
| DDR3 128Mx8 PC1333 | K4B1G0846F-HCH9 | Samsung | 20480 | 1 jour |
| DDR3 128Mx8 PC1333 CL9 | H5TQ1G83DFR-H9C | Hynix | 28800 | Actions HK |
| DDR3 128Mx8 PC1333 FGBA | H5TQ1G83BFR-H9C-C | Hynix | 19200 | 3 jours |
| DDR3 128Mx8 PC1333 FGBA | H5TQ1G83TFR-H9C-C | Hynix | 28800 | Actions HK |
| DDR3 128Mx8 PC1333 | MT41J128M8JP-15E : G | Micron | 20000 | 1 jour |
| DDR3 64Mx16 PC1333 | K4B1G1646G-BCH9 | Samsung | 10000 | 2 jours |
| DDR3 64Mx16 PC1333 | K4B1G1646E-HCH9 | Samsung | 8960 | 1 jour |
| DDR3 64Mx16 PC1333 | H5TQ1G63BFR-H9C | Hynix | 10000 | Actions HK |
| DDR3 64Mx16 PC1333 | H5TQ1G63DFR-H9C | Hynix | 30000 | 1 jour |
| DDR3 64Mx16 PC1333 | MT41J64M16JT-15E : G | Micron | 10000 | réservation |
| DDR3 64Mx16 PC1333 (9-9-9) | EDJ1116DBSE-DJ-F | Elpida | 10000 | 5 jours |
| DDR3 256Mx8 PC1066 | K4B2G0846C-HCF8 | Samsung | 4000 | 4 jours |
| DDR3 128Mx8 PC1066 | H5TQ1G83BFR-G7C-C | Hynix | 50000 | 3 jours |
| DDR3 64Mx16 PC1333 | K4B1G1646E-HCH9 | Samsung | 10000 | 1 jour |
| DDR3 128Mx16 PC1333 | MT41J128M16HA-15E : D | Micron | 10000 | réservation |
| DDR3 64Mx16 PC1333 | K4B1G1646G-BCH9 | Samsung | 10000 | 1 jour |
| LA RDA |
| GDDR3 64Mx16 800MHz | H5TQ1G63DFR-12C | Hynix | 10000 | Actions HK |
| GDDR5 64Mx32 2.0GHz | H5GQ2H24MFR-T0C | Hynix | 50000 | 3 jours |
| GDDR3 64Mx16 900MHz | H5TQ1G63DFR-11C | Hynix | 10000 | 1 jour |
| GDDR5 32Mx32 4.0Gbps | H5GQ1H24BFR-T2C | Hynix | 50000 | 4 jours |
| GDDR3 32Mx32 | EDW1032BABG-50-F | Elpida | 10000 | 4 jours |
| GDDR2 64MX16 400MHz | HY5PS1G1631CFP-25 | Hynix | 6424 | 2 jours |
| GDDR2 16Mx16 500Mhz | K4N56163QI-ZC20 | Samsung | 2000 | Actions HK |
| GDDR 8Mx16 200MHz TSOP | K4D261638K-LC50 | Samsung | 2640 | 1 jour |
| Le Pb de GDDR 8Mx16-5 TSOP libèrent | H5DU1262GTR-E3C | Hynix | 9600 | 1 jour |
| GDDR 4Mx32 200MHz | K4D263238K-FC50 | Samsung | 6127 | Actions HK |
| GDDR 4Mx32 200MHz | K4D263238K-UC50 | Samsung | 5000 | 7 jours |
| GDDR3 64Mx16 800MHz | H5TQ1G63BFR-12C | Hynix | 50000 | 5 jours |
| Le Pb de GDDR 4Mx32 250MHz libèrent | K4D263238K-VC40 | Samsung | 5000 | 1 jour |
| DDR3 128Mx16 FBGA 900MHz | H5TQ2G63BFR-11C | Hynix | | 1 jour |
| SDRAM mobile |
| La Mobile-RDA SDRAM 16M x32 | K4X51323PG-8GC6 | Samsung | 8400 | ACTIONS DE LA SZ |
| La Mobile-RDA SDRAM64Mx32 | K4X2G323PC-8GD8 | Samsung | 5000 | ACTIONS DE LA SZ |
| Puissance faible de Temp mobile de l'écart-type 32Mx16 133MHz Ind | K4M51163PG-BG75 | Samsung | 10240 | 1 jour |
| Écart-type mobile 16Mx32 | K4M51323PG-HG75 | Samsung | 5120 | 2 jours |
| Écart-type mobile 16Mx32 | K4M51323PC-DG75 | Samsung | 4480 | Actions |
| Écart-type mobile 16Mx32-6 | H55S5122DFR-60M-C | Hynix | 6400 | Actions HK |
