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Contact:MrsXia

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IPP026N10NF2SAKMA1

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature :-

Vgs(th) (Max) @ Id :3.8V @ 169µA

Operating Temperature :-55°C ~ 175°C (TJ)

Package / Case :TO-220-3

Gate Charge (Qg) (Max) @ Vgs :154 nC @ 10 V

Rds On (Max) @ Id, Vgs :2.6mOhm @ 100A, 10V

FET Type :N-Channel

Drive Voltage (Max Rds On, Min Rds On) :6V, 10V

Package :Tube

Drain to Source Voltage (Vdss) :100 V

Vgs (Max) :±20V

Product Status :Active

Input Capacitance (Ciss) (Max) @ Vds :7300 pF @ 50 V

Mounting Type :Through Hole

Series :StrongIRFET™ 2

Supplier Device Package :PG-TO220-3

Mfr :Infineon Technologies

Current - Continuous Drain (Id) @ 25°C :27A (Ta), 184A (Tc)

Power Dissipation (Max) :3.8W (Ta), 250W (Tc)

Technology :MOSFET (Metal Oxide)

Base Product Number :IPP026N

Description :TRENCH >=100V

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Mots clés du produit:

ISP1181ADGG

IP4220CZ6

ip44 16a

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