FGA30N120FTDTU
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :30 A
Pd - Power Dissipation :339 W
Collector- Emitter Voltage VCEO Max :1200 V
Package / Case :TO-3P-3
Maximum Operating Temperature :+ 150 C
Maximum Gate Emitter Voltage :+/- 25 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :2 V
Manufacturer :Fairchild Semiconductor
Description :IGBT Transistors 1200V 30A FS
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